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전우진 교수
  • 최종학위
  • 공학박사
  • 연구분야
  • 메모리 반도체 소자, 이차원(2D) 반도체 소재, 박막 증착 공정
  • 연구실위치
  • 공학실험동 113호
  • 연구실전화
  • 031-201-3650
  • 이메일
  • woojin.jeon@khu.ac.kr
· Ph.D., Seoul National University, Rep. of Korea, 2015 · M.S., Korea Advanced Institute of Science and Technology (KAIST), Rep. of Korea, 2007 · B.S., Korea Advanced Institute of Science and Technology (KAIST), Rep. of Korea, 2005
주요경력 및 활동
· Assistant Professor, Kyung Hee University, Rep. of Korea, 2018-present · Assistant Professor, Dankook University, Rep. of Korea, 2018 · Postdoctoral Fellow, French National Center for Scientific Research (CNRS) / CEA-LETI / Minatec, France, 2017 · Research Staff Member, Samsung Advanced Institute of Technology, Rep. of Korea, 2015-2016 · Research Scientist, Korea Institute of Science and Technology (KIST), Rep. of Korea, 2010-2011 · Assistant Research Engineer, SK Hynix, Rep. of Korea, 2007-2010
(Selected publication list) · Woojin Jeon, Yeonchoo Cho, Sanghyun Jo, Ji-Hoon Ahn, and Seong-Jun Jeong, “Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition”, Advanced Materials 29(47), 1703031 (Dec. 2017) · Yunseong Lee†, Woojin Jeon†, Yeonchoo Cho, Min-Hyun Lee, Seong-Jun Jeong, Jongsun Park, Seongjun Park, “Mesostructured HfxAlyO2 thin films as reliable and robust gate dielectrics with tunable dielectric constants for high-performance graphene-based transistors”, ACS Nano 10(7), 6659-6666 (Jun. 2016) · Da-Young Yeom, Woojin Jeon, Nguyen Dien Kha Tu, So Young Yeo, Sang-Soo Lee, Bong June Sung, Hyejung Chang, Jung Ah Lim & Heesuk Kim, “High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties”, Scientific Reports 5, 9817 (May 2015) · Woojin Jeon, Sang Ho Rha, Woongkyu Lee, Cheol Hyun An, Min Jung Chung, Sang Hyun Kim, Cheol Jin Cho, Seong Keun Kim, and Cheol Seong Hwang, "Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage", Physica Status Solidi RRL 9(7), 410 (Jul. 2015) · Woojin Jeon, Sang Ho Rha, Woongkyu Lee, Yeon Woo Yoo, Cheol Hyun An, Kwang Hwan Jung, Seong Keun Kim, and Cheol Seong Hwang, "Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films", ACS Applied Materials & Interfaces 6(10), 7910 (May 2014)
[Semiconductor Materials] · Evaluating physical and electrical properties of high-k (Al2O3, ZrO2, HfO2, TiO2...) and 2D materials (Graphene, MoS2...) · Novel material and devices development by organic-inorganic hybridization · Device physics especially on dielectric and interface between dielectric and metal [Electronic Devices] · Next-generation memory applications (DRAM, Flash memory, resistance-switching memory...)​​ · Novel FETs fabrication with 2D (graphene, TMDCs, …) and high-k materials [Thinfilm Deposition Techniques] · Deposition process evaluation with atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD) techniques for its device applications