Ph.D., Tokyo Institute of Technology, Applied Electronics, Japan, 2000.3 M.E., Tokyo Institute of Technology, Applied Electronics, Japan, 1997.9 B.E., Seoul National University, Inorganic Material Engineering, Korea, 1995.2

[Carriers] Professor, Kyung Hee University, Korea, 2016 - present Associate Professor, Kyung Hee University, Korea, 2011 - 2015 Senior Research Engineer, ETRI, Korea, 2001 – 2011 Post-doctoral Research Fellow, Tokyo Institute of Technology, Japan, 2000 - 2001 [Research Project] - Nonvolatile memory transistors using binary ferroelectric metal oxides thin films, National Research Foundation of Korea, 2017.03-2020.02. - Flexible flash memory device technologies for next-gen consumer electronics, Samsung Electronics, 2015.09-2020.08. - Development of core technologies on materials, devices, and processes for TFT backplane and light emitting frontplane with enhanced stretchability above 20%, with application to strechable display, Korea Evaluation Institute of Industrial Technology (KEIT), 2017.06-2020.12 - Synapse device technology using binary oxide ferroelectrics, ETRI, 2018.03-2019.11 - Adaptive-learning neuron devices using resistive-change oxide memory, National Research Foundation of Korea, 2013.11-2016.10 - The core technology development of light and space adaptable energy-saving I/O (Input/Output) platform for future advertising service, Institute for Information & communications Technology Promotion, 2012.03-2017.02. - Development of transparent flexible flash memory with integrated driving circuitry, National Research Foundation of Korea, 2012.05-2015.04 - Nonvolatile memory transistor embedded into the backplane for low-power green display, National Research Foundation of Korea, 2011.05-2014.04.

[2019-2017] 1. S. J. Yoon, D. H. Min, S. E. Moon, K. S. Park, J. I. Won, and S. M. Yoon*, “Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors with Metal-Ferroelectric-Metal-Insulator-Semiconductor Gate Stacks Using Al-doped HfO2 Thin Films,” IEEE Trans. Electron Dev. (Accepted) 2. D. H. Min, S. E. Moon, and S. M. Yoon*, “Design Strategies for Improvement in Nonvolatile Memory Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Capacitors Using Ferroelectric Hf0.5Zr0.5O2 Thin Films,“ J. Phys. D: Appl. Phys. (Accepted) 3. H. R. Kim, F. Mamoru, and S. M. Yoon*, “Highly-Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and ZeocoatTM Spacers on Ultra-Thin Polyimide Substrates,“ ACS Appl. Electron. Mater., vol. 1, no. 11, pp. 2363-2370, 2019. 4. J. H. Yang, D. H. Kim, M. H. Yoon, G. H. Kim, and S. M. Yoon*, “Mechanically Robust and Highly Flexible Nonvolatile Charge-Trap Memory Transistors Using Conducting Polymer Electrodes and Oxide Semiconductors on Ultra-Thin Polyimide Film Substrates,” Adv. Mater. Technol., vol. 4, no. 10, 1900348, 2019. 5. S. N. Choi, S. E. Moon, and S. M. Yoon*, “Film Thickness-Dependent Ferroelectric Polarization Switching Dynamics of Undoped HfO2 Thin Films Prepared by Atomic Layer Deposition,” Ceramics International, vol. 45, pp. 22642-22648, 2019. 6. T. H. Ryu, S. J. Yoon, S. Y. Na, and S. M. Yoon*, “Crystallization Annealing Effects on Ferroelectric Properties of Al-Doped HfO2 Thin Film Capacitors Using Indium-Tin-Oxide Electrodes,” Curr. Appl. Phys., vol. 19, no. 12, pp. 1383-1390, 2019. 7. H. W. Jang, S. K. Kim, and S. M. Yoon*, “Impact of Polyimide Film Thickness for Improving the Mechanical Robustness of Stretchable InGaZnO Thin Film Transistors Prepared on Wavy-Dimensional Elastomer Substrates,” ACS Appl. Mater. Interface, vol. 11, no. 37, pp. 34076-34083, 2019. 8. S. J. Yoon, S. Y. Na, S. E. Moon, S. M. Yoon*, “Polarization Switching Kinetics of the Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic Layer Deposition with Different Ozone Doses,” J. Vac. Sci. Technol., vol. 37, no. 5, 050601, 2019. 9. S. Y. Na, S. J. Yoon, S. Y. Kang, S. E. Moon, S. M. Yoon*, “Characterization of Metal-Ferroelectric-Metal-Insulator- Semiconductor Structures Using Ferroelectric Al doped HfO2 Thin Films Prepared by Atomic-Layer Deposition with Different O3 Doses,” Jpn. J. Appl. Phys., vol. 57, no. 7, 070907, 2019. 10. D. H. Min, S. Y. Kang, S. E. Moon, and S. M. Yoon*, “Impact of Thickness Control of Ferroelectric Hf0.5Zr0.5O2 Film on the Memory Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Capacitors,” IEEE Electron Devices Lett. vol. 40, no. 7, pp. 1032-1035, 2019. 11. H. R. Kim, C. S. Kang, S. Kim, C. W. Byun, and S. M. Yoon*, “Characterization on the Operation Stability of Mechanically Flexible Memory Thin-Film Transistors Using Engineered ZnO Charge-Trap Layers,” J. Phys. D: Appl. Phys. vol. 52, 325106, 2019. 12. S. M. Kwak, H. R. Kim, H. W. Jang, J. H. Yang, F. Mamoru, and S. M. Yoon*, “Improvement in Bias-Stress and long-Term Stabilities for In-Ga-Zn-O Thin-Film Transistors Using Solution-Process-Compatible Polymeric Gate Insulator,” Organic Electronics, vol. 17, pp. 7-13, 2019. 13. S. B. Ko, N. J. Seong, K. J. Choi, S. J. Yoon, S. N. Choi, and S. M. Yoon*, “Cationic compositional effects on the bias-stress stabilities for the thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition,” J. Mater. Chem. C, vol. 7, pp. 6059-6069, 2019. 14. S. Y. Na and S. M. Yoon*, “Impacts of HfO2/ZnO stack-structured charge-trap layers controlled by atomic layer deposition on nonvolatile memory characteristics of In-Ga-Zn-O channel charge-trap memory thin-film transistors,” J. Electron. Dev. Soc., vol. 7, no. 1, pp. 453-461, 2019. 15. [Invited] S. M. Yoon, J. H. Yang, H. R. Kim, H. W. Jang, M. J. Park, S. J. Kim, D. J. Yun, S. Y. Na, S. J. Yoon, M. T. Son, S. B. Ko, and S. M. Kwak, “Charge-Trap-Assisted Flexible Nonvolatile Memory Applications Using Oxide-Semiconductor Thin-Film Transistors, Jpn. J. Appl. Phys., vol. 9, no. 9, 090601, 2019. 16. M. T. Son, S. J. Kim, and S. M. Yoon*, “Impacts of Bottom-Gate Bias Control for Low-Voltage Memory Operations of Charge-Trap Memory Thin Film Transistors Using Oxide Semiconductors,” J. Semicon. Technol. Sci., vol. 19, no. 1, pp. 69-78, 2019. 17. H. R. Kim, J. H. Yang, G. H. Kim, and S. M. Yoon*, “Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate,“ J. Vac. Sci. Technol., vol. 37, no. 1, 010622, 2019. 18. S. E. Moon, J. H. Kim, J. P. Im, J. Lee, S. Y. Im, S. H. Hong, S. Y. Kang, and S. M. Yoon, “Deposition pressure dependent electric properties of (Hf, Zr)O2 thin films made by RF sputtering deposition method,” J. Kor. Phys. Soc., vol. 73, no. 11, pp. 1712-1715, 2018. 19. J. H. Yang, D. J. Yun, S. M. Kim, D. K. Kim, M. H. Yoon, G. H. Kim, S. M. Yoon*, “Introduction of Lithography-Compatible Conducting Polymer as Flexible Electrode for Oxide-Based Charge-Trap Memory Transistors on Plastic Poly(ethylene naphthalate) Substrates,” Solid State Electronics, vol. 150, pp. 35-40, 2018. 20. S. Y. Na and S. M. Yoon*, “Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition,” RSC Advances (Accepted) 2018. 21. J. W. Kim, T. J. Jung, and S. M. Yoon*, “Device characteristics of Schottky barrier diodes using In-Ga-Zn-O semiconductor thin films with different atomic ratios,” J. Alloys & Compounds, vol. 771, pp. 658-663, 2018. 22. H. W. Jang, H. R. Kim, J. H. Yang, C. W. Byun, C. S. Kang, S. Kim, and S. M. Yoon*, “Stability Improvements for InGaZnO Thin Film Transistors on Polyimide Substrates Treated by Al2O3 Buffer Layer,” Jpn. J. Appl. Phys. vol. 57, no. 9, 090313, 2018. 23. S. J. Yoon, N. J. Seong, K. Choi, W. C. Shin, and S. M. Yoon*, “Investigations on the Bias Temperature Stabilities of the Oxide Thin Film Transistors Using In-Ga-Zn-O Channels Prepared by Atomic-Layer Deposition,” RSC Advances, vol. 8, pp. 25014-25020, 2018. 24. H. B. Kang, Y. H. Kim, T. Y. Kim, S. M. Cho, S. Cheon, C. Y. Hwang, C. S. Hwang, and S. M. Yoon*, “Improvement in cyclic operation of unit pixel device using Sb-excess Ge2Sb2Te5 thin films for hologram image implementation,” Jpn. J. Appl. Phys. vol. 57, no. 8, 082201, 2018. 25. H. B. Kang, T. Y. Kim, Y. H. Kim, S. M. Cho, S. Cheon, C. Y. Hwang, C. S. Hwang, S. Y. Lee, and S. M. Yoon*, “Nitrogen doping effect for improving operation reliability of phase modulator using Ge2Sb2Te5 thin film for hologram image implementation,” J. Nanoscience & Nanotech. vol. 18, no. 9, 6933-6939, 2018. 26. J. H. Yang, D. J. Yun, G. H. Seo, and S. M. Yoon*, “Investigations on the Effects of Electrode Materials on the Device Characteristics of the Ferroelectric Memory Thin Film Transistors Fabricated on Flexible Substrates,” Jpn. J. Appl. Phys. vol. 57, no. 3, 03DB02, 2018. 27. S. Y. Na, Y. M. Kim, D. J. Yun, and S. M. Yoon*, “Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions,” J. Phys. D: Appl. Phys., vol. 50, no. 49, 495109, 2017. 28. K. M. Lee, Y. H. Kim, S. M. Yoon, J. Kim, and M. S. Oh, “Effects of channel thickness on oxide thin film transistor with double-stacked channel layer,” J. Kor. Phys. Soc. vol. 71, no. 9, 561-564, 2017. 29. Y. M. Kim, H. B. Kang, G. H. Kim, C. S. Hwang, and S. M. Yoon*, “Improvements in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer,” IEEE Electron Devices Lett., vol. 38, no. 10, pp. 1387-1389, 2017. 30. D. J. Yun, J. Y. Bak, C. W. Byun, and S. M. Yoon*, “Areal geometric Effects of a ZnO Charge-Trap Layer on Memory Transistor Operations for Embedded-Memory Circuit Applications,” IEEE Electron Devices Lett., vol. 38, no. 9, pp. 1263-1265, 2017. 31. S. M. Yoon, N. J. Seong, K. J. Choi, G. H. Seo, and W. C. Shin, “Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition,” ACS Appl. Mater. Interface, vol. 9, no. 27, pp. 22676-22684, 2017. 32. W. H. Lee and S. M. Yoon*, “Effects of device size and material on the bending performance of resistive-switching memory devices fabricated on flexible substrates,” Appl. Phys. Lett., vol. 110, 192103, 2017. 33. D. J. Yun, G. H. Seo, W. H. Lee, and S. M. Yoon*, “Improvement in Sensing Responses to Ammonia Gas for Gas Sensors with Separately Designed Sensing Element Using ALD-Grown ZnO Nanoparticles and Read-out Element of Top-Gate In-Ga-Zn-O Thin-Film Transistor,” IEEE Trans. Electron Dev., vol. 64, no. 5, pp. 2350-2356, 2017. 34. G. H. Seo, D. J. Yun, W. H. Lee, and S. M. Yoon*, “Atomic-Layer-Deposition-Assisted ZnO Nanoparticles for the Oxide Charge-Trap Memory Thin-Film Transistors,” Nanotech., vol. 28, 075202, 2017. 35. M. J. Park, W. H. Lee, S. Jung, G. R. Hong, S. Kim, Y. H. Kim, Y. Choi, and S. M. Yoon*, “Preparation of Mono-Layered Ag Nanoparticles for Charge-Trap Sites of Memory Thin-Film Transistors Using In-Ga-Zn-O Channel,” ECS Solid State Lett., vol. 6, no. 1, pp. Q18-Q22, 2017. [Core Publications of LEAD@KHU (2011-2016)] 1. Y. M. Kim, E. J. Kim, W. H. Lee, J. Y. Oh, and S. M. Yoon*, “Short-Term and Long-Term Memory Operations of the Synapse Thin-Film Transistors Using In-Ga-Zn-O Active Channel and Poly(4-vinylphenol)-Sodium β-Alumina Electrolytic Gate Insulator” RSC Adv., vol. 6, pp. 52913-52919, 2016. 2. S. J. Kim, M. J. Park, D. J. Yun, W. H. Lee, G. H. Kim, and S. M. Yoon*, “High-Performance and Stable Flexible Memory Thin-Film Transistors Using In-Ga-Zn-O Channel and ZnO Charge-Trap Layers on Poly(ethylene naphthalate) Substrate,” IEEE Trans. Electron Dev., vol. 63, no. 4, pp. 1577-1564, 2016. 3. K. A. Kim, C. W. Byun, J. H. Yang, S. H. Cho, K. I. Cho, C. S. Hwang, and S. M. Yoon*, “Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide Semiconductor Thin-Film Transistors for Low-Power Consumptions,” IEEE Trans. Electron Dev., vol. 63, no. 1, pp. 394-401, 2016. 4. M. J. Park, D. J. Yun, M. K. Ryu, J. H. Yang, J. E. Pi, O. S. Kwon, G. H. Kim, C. S. Hwang, J. Y. Bak, and S. M. Yoon*, “Improvements in Bending Performance and Bias Stability of Flexible InGaZnO Thin Film Transistors and Optimum Barrier Structures for Plastic Poly(ethylene naphthalate) Substrates,” J. Mater. Chem. C, vol. 3, pp. 4779-4786, 2015. 5. S. J. Kim, D. B. Jeon, J. H. Park, M. K. Ryu, J. H. Yang, C. S. Hwang, G. H. Kim, and S. M. Yoon*, “Nonvolatile Memory Thin-Film Transistors Using Biodegradable Chicken Albumen Gate Insulator and Oxide Semiconductor Channel on Eco-Friendly Paper Substrate,” ACS Appl. Mater. Interface, vol. 7, no. 8, 4869-4874, 2015. 6. J. Y. Bak, Y. Kang, S. Yang, H. J. Ryu, C. S. Hwang, S. Han, and S. M. Yoon*, “Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers,” Sci. Rep. vol. 5, 7884, 2015. 7. J. Y. Bak, M. K. Ryu, S. H. Ko Park, C. S. Hwang, and S. M. Yoon*, “Impact of charge-trap layer conductivity control on device performances of top-gate memory thin-film transistors using IGZO channel and ZnO charge-trap layer,” IEEE Trans. Electron Device, vol. 61, no. 7, pp. 2404-2411, 2014. 8. J. Y. Bak, S. H. Yang, M. K. Ryu, S. H. Ko Park, C. S. Hwang, and S. M. Yoon*, “Impact on the Electrode Materials on the Drain-Bias Stability Characteristics of In-Ga-Zn-O Thin-Film Transistors,” ACS Appl. Mater. Interface, vol. 4, No. 10, pp. 5369-5374, 2012.

[Summary] - 33 US patents and 3 JP patents registered. - 74 KO patents registered. [US & JP patents] 1. US Patent, 10008155 “Gate driving circuit and organic light emitting display device including the same.” (2018.8.26) 2. US Patent, 9099991 “Inverter, NAND gate, and NOR gate.” (2015.8.4) 3. US Patent, 8901532 “Non-volatile programmable device including phase change layer and fabricating method thereof.” (2014.12.2) 4. US Patent, 8872146 “Phase-change random access memory device and method of manufacturing the same.” (2014.10.28) 5. US Patent, 8716035 “Nonvolatile memory cell and method of manufacturing the same.” (2014.05.06) 6. US Patent, 8710866 “Inverter, NAND gate, and NOR gate.” (2014.04.29) 7. US Patent, 8570066 “Inverter, NAND gate, and NOR gate.” (2013.10.29) 8. US Patent, 8558295 “Nonvolatile memory cell and method of manufacturing the same.” (2013.10.15) 9. US Patent, 8493768 “Memory cell and memory device using the same.” (2013.07.23) 10. US Patent, 8476106 “Transparent nonvolatile memory thin film transistor and method of manufacturing the same.” (2013.07.02) 11. US Patent, 8470719 “Method for fabricating phase change memory device using solid state reaction.” (2013.06.25) 12. US Patent, 8445887 “Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same.” (2013.05.21) 13. US Patent, 8198625 “Transparent nonvolatile memory thin film transistor and method of manufacturing the same.” (2012.06.12) 14. JP Patent, 4980959 “酸化物薄膜トランジスタ素子の製造方法.” (2012.04.27) 15. JP Patent, 4929228 “相変化メモリー素子及びその製造方法.” (2012.02.17) 16. US Patent, 8071396 “Embedded phase-change memory and method of fabricating the same.” (2011.12.06) 17. US Patent, 8039294 “Insulating Layer, Organic Thin Film Transistor Using the Insulating Layer and Method of Fabricating the Organic Thin Film Transistor.” (2011.10.18) 18. US Patent, 7989793 “Electrical Device Using Phase Change Material, Phase Change Memory Device Using Solid State Reaction and Method for Fabricating the Same.” (2011.08.02) 19. US Patent, 7977674 “Phase Change Memory Device and Method Fabricating the Same.” (2011.06.12) 20. US Patent, 7952086 “Phase-change nonvolatile memory device using Sb-Zn alloy.” (2011.05.31) 21.US Patent, 7920413 “Apparatus and method for writing data to phase-change memory by using power calculation and data inversion.” (2011.04.05) 22. US Patent, 7911227 “Programmable logic block of FPGA using phase-change memory device.” (2011.03.22) 23. US Patent, 7884347 “Phase change memory device and method of fabricating the same.” (2011.02.08) 24. US Patent, 7867811 “Encapsulated organic luminescent display panel and method for manufacturing the same,” (2011.1.11) 25. US Patent, 7855421 “Embedded phase-change memory and method of fabricating the same.” (2010.12.21) 26. US Patent, 7767994 “Phase-change random access memory device and method of manufacturing the same.” (2010.8.3) 27. JP Patent, 4417370 “半導体レーザ部を有する相変化メモリ素子.” (2009.12.04) 28. US Patent, 7586119 “Thermal-cured polymer insulator for OTFTs.” (2009.09.08) 29. US Patent, 7564053 “Photo-reactive organic polymeric gate insulating film and organic thin-film transistor using the same.” (2009.07.21) 30. US Patent, 7547913 “Phase change memory device using Sb-Se metal alloy and method of manufacturing the same.” (2009.06.16) 31. US Patent, 7507601 “Encapsulated organic luminescent display panel and method for manufacturing the same.” (2009.03.24) 32. US Patent, 7482625 “Composition for thermosetting organic polymeric gate insulating layer and organic thin-film transistor using the same.” (2009.01.27) 33. US Patent, 7417891 “Phase-change memory device having semiconductor laser unit.” (2008.08.26) 34. US Patent, 7233017 “Multibit phase change memory device and method for driving the same.” (2007. 6. 19) 35. US Patent, 7061012 “Encapsulated organic luminescent display panel and method for manufacturing the same.” (2006.6.13) 36. US Patent, 7026639 “Phase change memory element capable of low power operation and method of fabricating the same.” (2006. 04. 11)

[Activities] Vice-Dean in College of Engineering, Kyung Hee University, 2016.01-2018.02 Associate Editor, Japanase Journal of Applied Physics (JJAP) & Applied Physics Expess (APEX), 2018.04-present. Academic Board Member, Korean Institute of Electrical & Electronic Material Engineering (KIEEME), 2016.01-present. Editor-in-Chief, Bulletin of the Korean Institute of Electrical and Electronic Material Engineers, 2016-2019. Academic Board Member, Korean Society for Engineering Education, 2015-2016. Associate Editor, Electronic Express (ELEX), 2011.06-2014.05. [Awards@KHU] AMFPD17, Best Paper Award, 2018. KIEEME Award, 2017. AMFPD15, Best Paper Award, 2016. KCS2015, Best Paper Award, 2016. AMFPD14, Best Paper Award, 2015. Best Teaching Awards in College of Engineering, Kyung Hee University, 2012

[Oxide Semiconductor-Based Electronic Devices] - Oxide Semiconductor channel thin film transistor - Dielectric & conductive thin film - Oxide thin film sensor device - Transparent electronic circuit using oxide TFT [Semiconductor process & devices] - Semiconductor device fabrication process - Device physics & new device concept - Novel functional semiconductor-based device [Next-Generation Nonvolatile Memory Devices] - Oxide semiconductor-based Nonvolatile memory - Ferroelectric field-effect memory device - Transparent memory transistor - Neuromorphic adaptive-learning synapse device [Inorganic-Organic Hybrid Flexible Devices] - Flexible oxide TFT & circuit - Inorganic/organic hybrid flexible sensor device - Inorganic/organic energy device