· 2015 / 서울대학교 재료공학부 공학박사 · 2007 / 한국과학기술원 (KAIST) 신소재공학과 석사 · 2005 / 한국과학기술원 (KAIST) 신소재공학과 학사 · Ph.D., Seoul National University, Rep. of Korea, 2015 · M.S., Korea Advanced Institute of Science and Technology (KAIST), Rep. of Korea, 2007 · B.S., Korea Advanced Institute of Science and Technology (KAIST), Rep. of Korea, 2005

· 2018 - 현재 / 경희대학교 정보전자신소재공학과 조교수 · 2018 / 단국대학교 신소재공학과 조교수 · 2017 / 프랑스 국립과학연구센터 (CNRS), 원자력 및 대체에너지 연구소 (CEA-LETI) 박사후연구원 · 2015-2016 / 삼성전자 종합기술원 전문연구원 · 2010-2011 / 한국과학기술연구원 (KIST) 위촉연구원 · 2007-2010 / SK하이닉스 주임연구원 · Assistant Professor, Kyung Hee University, Rep. of Korea, 2018-present · Assistant Professor, Dankook University, Rep. of Korea, 2018 · Postdoctoral Fellow, French National Center for Scientific Research (CNRS) / CEA-LETI / Minatec, France, 2017 · Research Staff Member, Samsung Advanced Institute of Technology, Rep. of Korea, 2015-2016 · Research Scientist, Korea Institute of Science and Technology (KIST), Rep. of Korea, 2010-2011 · Assistant Research Engineer, SK Hynix, Rep. of Korea, 2007-2010

(Selected publication list) · Woojin Jeon, Yeonchoo Cho, Sanghyun Jo, Ji-Hoon Ahn, and Seong-Jun Jeong, “Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition”, Advanced Materials 29(47), 1703031 (Dec. 2017) · Yunseong Lee†, Woojin Jeon†, Yeonchoo Cho, Min-Hyun Lee, Seong-Jun Jeong, Jongsun Park, Seongjun Park, “Mesostructured HfxAlyO2 thin films as reliable and robust gate dielectrics with tunable dielectric constants for high-performance graphene-based transistors”, ACS Nano 10(7), 6659-6666 (Jun. 2016) · Da-Young Yeom, Woojin Jeon, Nguyen Dien Kha Tu, So Young Yeo, Sang-Soo Lee, Bong June Sung, Hyejung Chang, Jung Ah Lim & Heesuk Kim, “High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties”, Scientific Reports 5, 9817 (May 2015) · Woojin Jeon, Sang Ho Rha, Woongkyu Lee, Cheol Hyun An, Min Jung Chung, Sang Hyun Kim, Cheol Jin Cho, Seong Keun Kim, and Cheol Seong Hwang, "Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage", Physica Status Solidi RRL 9(7), 410 (Jul. 2015) · Woojin Jeon, Sang Ho Rha, Woongkyu Lee, Yeon Woo Yoo, Cheol Hyun An, Kwang Hwan Jung, Seong Keun Kim, and Cheol Seong Hwang, "Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films", ACS Applied Materials & Interfaces 6(10), 7910 (May 2014)

[반도체 재료] · high-k (Al2O3, ZrO2, HfO2, TiO2...), 2D materials (Graphene, MoS2...) 에 대한 물리적, 전기적 특성 향상 · 유-무기 하이브리드를 통한 새로운 재료 및 소자 개발 · 유전막 또는 유전막/전극막 계면에서의 물리적-화학적 특성 연구 [반도체 소자] · 차세대 메모리 반도체 소자 (DRAM, Flash memory, resistance-switching memory...)​​ · 2D (graphene, TMDCs, …) 및 high-k 재료 기반 새로운 FETs 개발 [박막 증착 공정] · Atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD) 등 박막 증착 공정 개발 및 소자 적용 연구 [Semiconductor Materials] · Evaluating physical and electrical properties of high-k (Al2O3, ZrO2, HfO2, TiO2...) and 2D materials (Graphene, MoS2...) · Novel material and devices development by organic-inorganic hybridization · Device physics especially on dielectric and interface between dielectric and metal [Electronic Devices] · Next-generation memory applications (DRAM, Flash memory, resistance-switching memory...)​​ · Novel FETs fabrication with 2D (graphene, TMDCs, …) and high-k materials [Thinfilm Deposition Techniques] · Deposition process evaluation with atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD) techniques for its device applications